Data for reference eckey-apl-68-415

Dynamics of bound-exciton luminescences from epitaxial GaN

L. Eckey, J.-Ch. Holst, P. Maxim, R. Heitz, A. Hoffmann, I. Broser , B. K. Meyer, C. Wetzel , E. N. Mokhov, P. G. Baranov

Applied Physics Letters 68(3), 415 (1996).

Time-integrated and time-resolved photoluminescence measurements at low temperatures were obtained for GaN epitaxial layers grown by a sublimation technique on 6H-SiC substrates. Lifetimes for various excitons were then determined.

This item is cited by the following items in the database:

  1. Luminescence and Reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE.
  2. Optical nonlinearities of Gallium Nitride
  3. Current status of GaN crystal growth by sublimation sandwich technique

Contributed by Eric Watko from alistair.rti.org. on Thursday, February 22, 1996 5:02:30 PM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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