Data for reference mcintosh-apl-68-40

Growth and characterization of AlInGaN quaternary alloys

F. G. McIntosh, K. S. Boutros, J. C. Roberts, S. M. Bedair , E. L. Piner, N. A. El-Masry

Applied Physics Letters 68(1), 40 (1996).

AlInGaN grown on (0001) sapphire at 750 C with up to 15% AlN and 14% InN is reported. Preliminary results indicate that the lattice constant can be obtained from Vegard's Law indicating solid solubility.

This item cites the following items in the database:

  1. Candela-class high-brightness InGaN/AlGaN double- heterostructure blue-light-emitting diodes
  2. High dislocation densities in high efficiency GaN-based light-emitting diodes
  3. Wide-Gap Semiconductor InGaN and InGaAlN Grown by MOVPE

This item is cited by the following items in the database:

  1. AlGaInN Quaternary Alloys by MOCVD
  2. Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire

Contributed by Edwin L. Piner from gator1-77.mte.ncsu.edu. on Wednesday, June 12, 1996 3:58:58 PM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Friday, April 29, 2005 5:41:22 PM.
© 1998 The Materials Research Society