Data for reference lim-apl-68-3761

High responsitivity intrinsic photoconductors based on AlxGa1-xN

B. W. Lim, Q. C. Chen, J. Y. Yang, M. Asif Khan

Applied Physics Letters 68(26), 3761 (1996).

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This item is cited by the following items in the database:

  1. Characterization and Modeling of Photoconductive GaN Ultraviolet Detectors
  2. Plasma Cleaning and Nitridation of Sapphire Substrates for AlxGa1-xN Epitaxy as Studied by ARXPS and XPD
  3. Ultraviolet Photodetectors Based on AlxGa1-xN Schottky Barriers

Contributed by Andrej E. Nikolaev from shuttle.ioffe.rssi.ru. on Sunday, June 30, 1996 8:26:44 AM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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