Data for reference lin-apl-68-3758The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment
of the GaN buffer layer
C. F. Lin, G. C. Chi , M. S. Feng , J. D. Guo , J. S. Tsang , J. Minghuang Hong
Applied Physics Letters 68(26), 3758 (1996).
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This item is cited by the following items in the database:
- Plasma Cleaning and Nitridation of Sapphire Substrates for AlxGa1-xN Epitaxy as Studied by ARXPS and XPD
- Review of polarity determination and control of GaN
Contributed by Andrej E. Nikolaev from shuttle.ioffe.rssi.ru. on Sunday, June 30, 1996 8:16:41 AM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru
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