Data for reference zhang-apl-68-367

Electron cyclotron resonance etching characteristics of GaN in SiCl4/Ar

L. Zhang, J. Ramer, J. Brown, K. Zheng, L. F. Lester, S. D. Hersee

Applied Physics Letters 68(3), 367 (1996).

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This item is cited by the following items in the database:

  1. Etching processes for fabrication of GaN/InGaN/AlN microdisk laser structures
  2. Electron cyclotron resonance etching of III–V nitrides in IBr/Ar plasmas
  3. New plasma chemistries for etching GaN and InN: BI3 and BBr3

Contributed by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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