Data for reference nakamura-apl-68-3269

Characteristics of InGaN multi-quantum-well-structure laser diodes

Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Naruhito Iwasa, Takao Yamada, ToshioMatsushita, Hiroyuki Kiyoku, Yasunobu Sugimoto

Applied Physics Letters 68(23), 3269 (1996).

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This item is cited by the following items in the database:

  1. Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes
  2. Electronic band structures and effective-mass parameters of wurtzite GaN and InN
  3. Optical properties of electron-irradiated GaN

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