Data for reference gotz-apl-68-3144

Activation energies of Si donors in GaN

W. Gotz, N. M. Johnson , C. Chen, H. Liu, C. Kuo, W. Imler

Applied Physics Letters 68(22), 3144 (1996).

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This item is cited by the following items in the database:

  1. Paramagnetic defects in GaN
  2. Photoluminescence, Magnetospectroscopy, and Resonant Electronic Raman Studies of Heteroepitaxial Gallium Nitride

Contributed by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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