Data for reference chow-apl-68-296

Theoretical study of room temperature optical gain in GaN strained quantum wells

W. W. Chow, A. F. Wright, J. S. Nelson

Applied Physics Letters 68(3), 296 (1996).

A study of quantum well structures composed of alloys of GaN, AlN, and InN is completed. The approach involves first-principles band structure calculations.

This item is cited by the following items in the database:

  1. Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes
  2. Electronic band structures and optical gain spectra of strained wurtzite GaN-AlxGa1-xN quantum-well lasers

Contributed by Eric Watko from alistair.rti.org. on Thursday, February 22, 1996 4:52:31 PM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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