Data for reference waldrop-apl-68-2879

Measurement of AlN/GaN (0001) heterojunction band offsets by x-ray photoemission spectroscopy

J. R. Waldrop, R. W. Grant

Applied Physics Letters 68(20), 2879 (1996).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. XPS study of Au/GaN and Pt/GaN contacts
  2. Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes
  3. Preparation of stoichiometric GaN(0001)-1×1: an XPS study

Contributed by Andrei Nikolaev from shuttle.ioffe.rssi.ru

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Wednesday, May 4, 2005 10:53:01 AM.
© 1998 The Materials Research Society