Data for reference parillaud-apl-68-2654

High quality InP on Si by conformal growth

O. Parillaud, E. Gil-Lafon, B. Gérard, P. Etienne, D. Pribat

Applied Physics Letters 68(19), 2654 (1996).

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This item is cited by the following items in the database:

  1. Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
  2. Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
  3. Localized Epitaxy of GaN by HVPE on patterned Substrates

Contributed by A submitted manuscript, on February 23, 1998 3:30:45 PM

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