Data for reference wetzel-apl-68-2547Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers
C. Wetzel, E. E. Haller , H. Amano, I. Akasaki
Applied Physics Letters 68(18), 2547 (1996).
The authors have measured and calculated infrared reflection spectra obtained within the phonon region of GaN, AlGaN and AlN heterostructures grown on sapphire and Si substrates.
This item is cited by the following items in the database:
- Optical phonons and free-carrier effects in MOVPE grown AlxGa1-xN measured by Infrared Ellipsometry
Contributed by Xiuling Li from cowboy.ccsm.uiuc.edu. on Monday, June 10, 1996 6:02:50 PM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru
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