Data for reference yang-apl-68-244

Evaluation of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs

H. Yang, O. Brandt, M. Wassermeier, J. Behrend, H. P. Schonherr, K. H. Ploog

Applied Physics Letters 68(2), 244 (1996).

A study of GaN on (001) GaAs reveals three surface reconstructions having (1x1), (2x2), and c(2x2) symmetries.

This item is cited by the following items in the database:

  1. The role of gaseous species in group-III nitride growth
  2. Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN

Contributed by Eric Watko from alistair.rti.org. on Thursday, February 22, 1996 4:52:14 PM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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