Data for reference huang-apl-68-2392

Electrical characterization of Mg-doped GaN grown by metalorganic vapor phase epitaxy

J. W. Huang, T. F. Kuech, H. Lu, I. Bhat

Applied Physics Letters 68(17), 2392 (1996).

Electrical characterization of p-type Mg-doped GaN by frequency-dependent capacitance and temperature-dependent conductance measurements is reported.

This item is cited by the following items in the database:

  1. Alternative N precursors and Mg doped GaN grown by MOVPE
  2. Solar-Blind AlGaN Heterostructure Photodiodes

Contributed by Xiuling Li from cowboy.ccsm.uiuc.edu. on Monday, May 13, 1996 2:16:28 PM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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