Data for reference guo-apl-68-235

A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films

J. D. Guo , C. I. Lin, M. S. Feng , F. M. Pan , G. C. Chi , C. T. Lee

Applied Physics Letters 68(2), 235 (1996).

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This item is cited by the following items in the database:

  1. Study of GaN films grown by metalorganic chemical vapour deposition
  2. Interfacial Reactions and Electrical Properties of Ti/n-GaN Contacts

Contributed by Wim Van der Stricht from intec.rug.ac.be. on Friday, May 31, 1996 4:34:57 AM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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