Data for reference dmitriev-apl-68-229

Electric breakdown in GaN p-n junctions

V. A. Dmitriev, K. G. Irvine, C. H. Carter, Jr., N. I. Kuznetsov, E. V. Kalinina

Applied Physics Letters 68(2), 229 (1996).

A study of GaN p-n junctions was completed. The electric breakdown was shown to occur at a reverse voltage of 40-150 V.

This item is cited by the following items in the database:

  1. GaN Based p‐n Structures Grown on SiC Substrates
  2. Growth and Device Performance of GaN Schottky Rectifiers

Contributed by Eric Watko from chaos1.rti.org. on Monday, February 19, 1996 6:31:38 PM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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