zolper-apl-68-2273

Data for reference zolper-apl-68-2273

Ion-implanted GaN junction field effect transistor

J. C. Zolper, R. J. Shul, A. G. Baca , R. G. Wilson , S. J. Pearton , R. A. Stall

Applied Physics Letters 68(16), 2273 (1996).

Ca (p-type) and Si (n-type) ion implantation and rapid thermal annealing at 1150 C was used to fabricated a GaN junction field effect transistor (JFET). A tungsten gate contact is employed to the p-type gate and is in-place during the 1150 C anneal. A transconductance of 7 mS/mm and staturation current of 33 mA/mm were demonstrated for a 1.7 um long device.

This item is cited by the following items in the database:

Etching processes for fabrication of GaN/InGaN/AlN microdisk laser structures

Contributed by John C. Zolper from sahp315.sandia.gov. on Tuesday, April 30, 1996 3:16:41 PM
Modified by John C. Zolper from sahp315.sandia.gov. on Wednesday, May 1, 1996 2:41:28 PM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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