sink-apl-68-2147

Data for reference sink-apl-68-2147

Cleaved GaN facets by wafer fusion of GaN to InP

R. K. Sink, S. Keller, B. P. Keller, D. I. Babic, A. L. Holmes, D. Kapolnek, S. P. DenBaars, J. E.Bowers , X. H. Wu, J. S. Speck

Applied Physics Letters 68(15), 2147 (1996).

A method for obtaining cleaved facet mirrors for GaN films grown on sapphire is presented. Successful fusion of GaN to InP without voids or oxide at the interface and optically flat cleaved GaN facets are achieved. Current injection across the fused surface at low voltages is demonstrated. This provides a viable means for the fabrication of GaN in-plane lasers, although fusion uniformity has yet been satifctory for laser production.

Contributed by Xiuling Li from cowboy.ccsm.uiuc.edu. on Tuesday, May 14, 1996 12:53:30 PM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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