The second GaN laser paper. MgAl2O4 was used as the substrate instead of sapphire. Spinel could in principle produce cleaved GaN facets, but polished facets were used in this work. This laser was improved compared to the original report, with a threshold current density of 8 kA/cm2.
This item is cited by the following items in the database:
- Correlation between surface morphologies and crystallographic structures of GaN layers grown by MOCVD on sapphire
- Room Temperature pulsed operation of nitride based MQW laser diodes with cleaved facets on conventional c-face sapphire substrates
- Room Temperature CW Operation of InGaN MQW Structure Laser Diodes
- Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes
- Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
- A Perspective on the GaN Injection Laser
- Plasma Cleaning and Nitridation of Sapphire Substrates for AlxGa1-xN Epitaxy as Studied by ARXPS and XPD
- Time-resolved Spectroscopy of the violet luminescence of undoped AlN
Contributed by Toby Strite from internet-gw.zurich.ibm.ch. on Tuesday, April 23, 1996 9:59:16 AM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru
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