Data for reference walker-apl-68-2100

AlGaN ultraviolet photoconductors grown on sapphire

D. Walker, X. Zhang, P. Kung, A. Saxler, S. Javadpour, J. Xu, M. Razeghi

Applied Physics Letters 68(15), 2100 (1996).

MOCVD-grown AlGaN UV photodetectors with a minimum cutoff wavelength shorter than 260 nm at room temperature have been fabricated and characterized.

This item is cited by the following items in the database:

  1. Etching processes for fabrication of GaN/InGaN/AlN microdisk laser structures

Contributed by Xiuling Li from cowboy.ccsm.uiuc.edu. on Tuesday, May 14, 1996 1:13:35 PM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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