Data for reference zolper-apl-68-1945

Ca and O ion implantation doping of GaN

J. C. Zolper , R. G. Wilson , S. J. Pearton , R. A. Stall

Applied Physics Letters 68(14), 1945 (1996).

Ca and O ions were implanted into GaN. Their electrical and redistribution properties were studied. Ca was shown to act as an acceptor with an ionization energy of 169 meV, equivalant to that of Mg. O is shown to be a shallow donor with an estimated ionization level of 29 meV. Neither element displayed measurable redistribution after a 1125 C, 15 s anneal.

This item is cited by the following items in the database:

  1. Ion Implantation and Rapid Thermal Processing of III-V Nitrides
  2. Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N2 overpressure
  3. Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N2 overpressure
  4. Temperature behaviour of the yellow emission in GaN

Contributed by John C. Zolper from sahp315.sandia.gov. on Tuesday, April 30, 1996 2:56:42 PM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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