Data for reference smith-apl-68-1883

Mechanisms of band-edge emission in Mg-doped p-type GaN

M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang , A. Salvador, B. N. Sverdlov, A. Botchkarev, H. Morkoc , B. Goldenberg

Applied Physics Letters 68(14), 1883 (1996).

The nature of the PL emission lines in Mg-doped GaN has been studied using time-resolved PL. Based on measured recombination lifetimes (sub-ns), excitation power denpendence and decay kinetics, the lines at 3.21 eV and 2.95 eV are assigned to be the conduction band-to-impurity (not DAP) transitions involving shallow Mg impurities and doping related deep level centers, respectively.

This item is cited by the following items in the database:

  1. Luminescence and Reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE.
  2. Yellow luminescence in Mg-doped GaN
  3. p-doping of GaN by MOVPE
  4. Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's
  5. On the origin of the 2.8 eV blue emission in p-type GaN:Mg : A time-resolved photoluminescence investigation

Contributed by Xiuling Li from canberra-13.slip.uiuc.edu. on Sunday, May 12, 1996 2:21:31 AM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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