Data for reference schmidt-apl-68-1820

Room-temperature stimulated emission in GaN/AlGaN separate confinement heterostructures grown by molecular beam epitaxy

T. J. Schmidt, X. H. Yang, W. Shan, J. J. Song , A. Salvador, W. Kim, O. Aktas, A. Botchkarev, H. Morkoc

Applied Physics Letters 68(13), 1820 (1996).

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This item is cited by the following items in the database:

  1. Room Temperature CW Operation of InGaN MQW Structure Laser Diodes
  2. Etching processes for fabrication of GaN/InGaN/AlN microdisk laser structures
  3. Raman characterization of the optical phonons in AlxGa1-xN layers grown by MBE and MOCVD

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