Applied Physics Letters 68(13), 1802 (1996).
These results reflect what is believed to be the first observation of electron emission from carbon-doped boron nitride (BN). The n-type BN films were synthesized on n-type polycrystalline diamond on (100)Si using reactive laser ablation. The electron emission current density measured at room temperature shows a power law dependence. Emission currents as high as 60 mA cm^-2 have been measured from 150 nm thick n-type BN films on a 24 micron n-type polycrystalline diamond film on a (100)Si substrate. These films show a current density/applied field behavior indicative of negative electron affinity.
Contributed by Roger W. Pryor from diamond1.physics.wayne.edu. on Friday, April 26, 1996 1:44:34 PM
last updated Monday, May 2, 2005 1:06:48 PM.
© 1998 The Materials Research Society