Data for reference keller-apl-68-1525

Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition

S. Keller, B. P. Keller, Y.-F. Wu, B. Heying, D. Kapolnek, J. S. Speck, U. K. Mishra, S. P.DenBaars

Applied Physics Letters 68(11), 1525 (1996).

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This item is cited by the following items in the database:

  1. Plasma Cleaning and Nitridation of Sapphire Substrates for AlxGa1-xN Epitaxy as Studied by ARXPS and XPD
  2. Defect structure in selectively grown GaN films with low threading dislocation density
  3. Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy
  4. The Polarity of GaN: a Critical Review
  5. Review of polarity determination and control of GaN

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