Data for reference wu-apl-68-1371

Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN

X. H. Wu, D. Kapolnek, E. J. Tarsa, B. Heying , S. Keller, B. P. Keller, U. K. Mishra , S. P. DenBaars , J. S. Speck

Applied Physics Letters 68(10), 1371 (1996).

The study of the nucleation layers of GaN grown at 600 C by atmospheric pressure MOCVD was completed. Atomic force microscopy (AFM), reflection high energy electron diffraction (RHEED), and transmission electron microscopy (TEM) were the analytical tools used in this investigation.

This item is cited by the following items in the database:

  1. The Polarity of GaN: a Critical Review
  2. High-temperature structural behavior of Ni/Au Contact on GaN(0001)

Contributed by Eric Watko from chaos1.rti.org. on Wednesday, April 3, 1996 5:00:38 PM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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