Data for reference hacke-apl-68-1362

Deep levels in the upper band-gap region of lightly Mg- doped GaN

P. Hacke, H. Nakayama, T. Detchprohm, K. Hiramatsu, N. Sawaki

Applied Physics Letters 68(10), 1362 (1996).

Undoped and weakly Mg-doped GaN films were deposited by MOCVD. Deep level transient spectroscopy was used to probe below the conduction band at 0.26 and 0.62 eV.

This item is cited by the following items in the database:

  1. Yellow Band and Deep levels in Undoped MOVPE GaN.
  2. p-doping of GaN by MOVPE
  3. Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's

Contributed by Eric Watko from chaos1.rti.org. on Wednesday, April 3, 1996 4:50:21 PM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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