Data for reference wang-apl-68-1267

High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN

Lei Wang, M. I. Nathan , T-H. Lim , M. A. Khan, Q. Chen

Applied Physics Letters 68(9), 1267 (1996).

Platinum (Pt) and palladium (Pd) Schottky diodes on n-type GaN were investigated using the current-voltage (I-V), capacitance-voltage (C-V) and activation energy (I-V-T) methods.

This item is cited by the following items in the database:

  1. Interfacial Reactions and Electrical Properties of Ti/n-GaN Contacts
  2. Schottky Diodes on MOCVD Grown AlGaN Films.

Contributed by Xiuling Li from cowboy.ccsm.uiuc.edu. on Tuesday, March 19, 1996 4:51:32 PM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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