Data for reference zhu-apl-68-1141

Structural properties of GaN films grown on sapphire by molecular beam epitaxy

Q. Zhu , A. Botchkarev, W. Kim, O. Aktas, A. Salvador, B. Sverdlov, H. Morkoc , S.-C. Y. Tsen, David J. Smith

Applied Physics Letters 68(8), 1141 (1996).

High resolution synchrotron x-ray diffraction and electron microscopy has been used to study the structural properties of GaN films grown on sapphire by MBE. It is observed that the out-of-plane structural features, in particular, the (00l) mosaic spread, cannot be used for determining the material quality with respect to their optical and electrical properties.

This item is cited by the following items in the database:

  1. Optical nonlinearities of Gallium Nitride
  2. New Technique for Sublimation Growth of AlN Single Crystals

Contributed by Xiuling li from cowboy.ccsm.uiuc.edu. on Tuesday, March 19, 1996 11:48:21 AM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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