sun-apl-68-1129

Data for reference sun-apl-68-1129

Deposition of high quality wurtzite GaN films over cubic (111) MgAl₂O₄ substrates using low pressure metalorganic chemical vapor deposition

C. J. Sun, J. W. Yang, Q. Chen, M. Asif Khan , T. George, P. Chang-Chien , S. Mahajan

Applied Physics Letters 68(8), 1129 (1996).

Deposition of high quality wurtzite GaN films on cubic (111) spinel (MgAl2O4) substrates is reported. The optically pumped stimulated emission threshold and the room temperature electron mobility for these films are nealy identical to those films deposited on sapphire substrates. TEM reveals a common cleavage plane for (111) spinel and the wurtzite GaN films.

Contributed by Xiuling li from cowboy.ccsm.uiuc.edu. on Tuesday, March 19, 1996 12:09:52 PM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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Deposition of high quality wurtzite GaN films over cubic (111) MgAl2O4 substrates using low pressure metalorganic chemical vapor deposition

Deposition of high quality wurtzite GaN films over cubic (111) MgAl₂O₄ substrates using low pressure metalorganic chemical vapor deposition