Data for reference zhang-apl-63-367Electron Cyclotron resonance etch characteristics of GaN in SiCl4/Ar
L. Zhang, J. Ramer, J. Brown, K. Zheng, L. F. Lester, D. Hersee
Applied Physics Letters 63(3), 367 (1996).
960Å/min etching rate is reported by using low pressure (4-10 m Torr) SiCl4/Ar ECR discharges.
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