Data for reference ponce-apl-67-410

Microstructure of GaN epitaxy on SiC using AlN buffer layers

F. A. Ponce, B. S. Krusor , J. S. Major, W. E. Plano, D. F. Welch

Applied Physics Letters 67(3), 410 (1995).

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This item is cited by the following items in the database:

  1. Free Excitons in GaN
  2. In Situ Control of GaN Growth by Molecular Beam Epitaxy
  3. Electrical characteristics of GaN/6H-SiC n-p heterojunctions.
  4. New Technique for Sublimation Growth of AlN Single Crystals

Contributed by Bo A I Monemar from mac101.ifm.liu.se. on Thursday, May 30, 1996 6:12:53 AM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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