Data for reference weeks-apl-67-401

GaN thin films deposited via organometallic vapor phase epitaxy on alpha (6H)-SiC(0001) using high-temperature monocrystalline AlN buffer layers

T. Warren Weeks, Michael D. Bremser, K. Shawn Ailey, Eric Carlson, William G. Perry, Robert F. Davis

Applied Physics Letters 67(3), 401 (1995).

Monocrystalline GaN (0001) thin films, void of oriented domain structures and associated low-angle grain boundaries, have been grwon via organometallic vapor phase epitaxy on high-temperature AlN(0001) buffer layers on vicinal alpha-6H-SiC wafers.

This item is cited by the following items in the database:

  1. Growth, Doping and Characterization of AlxGa1-xN Thin Film Alloys on 6H-SiC(0001) Substrates
  2. GaN Layers Grown by HVPE on P-type 6H-SiC Substrates
  3. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
  4. Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates

Contributed by M. D. Bremser from gatormac3.mte.ncsu.edu. on Thursday, July 18, 1996 11:40:38 AM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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