guo-apl-67-2657

Data for reference guo-apl-67-2657

Study of Schottky barriers on n-type GaN grown by low- pressure metalorganic chemical vapor deposition

J. D. Guo , M. S. Feng, R. J. Guo , F. M. Pan, C. Y. Chang

Applied Physics Letters 67(18), 2657 (1995).

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This item is cited by the following items in the database:

Metal Contacts on α-GaN

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