Data for reference zhang-apl-67-2028

Photovoltaic effects in GaN structures with p-n junctions

X. Zhang, P. Kung, D. Walker, J. Piotrowski, A. Rogalski, A. Saxler, M. Razeghi

Applied Physics Letters 67(14), 2028 (1995).

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This item is cited by the following items in the database:

  1. The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor
  2. Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy

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