Data for reference nakamura-apl-67-1868

High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes

Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa, Shin-ichi Nagahama

Applied Physics Letters 67(13), 1868 (1995).

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This item is cited by the following items in the database:

  1. GaN Based p‐n Structures Grown on SiC Substrates
  2. The Rate of Radiative Recombination in the Nitride Semiconductors and Alloys
  3. Thermal stability of W, WSix , and Ti/Al ohmic contacts to InGaN, InN, and InAlN
  4. High temperature surface degradation of III–V nitrides
  5. Degenerate Layer at GaN/sapphire interface: Influence on Hall-effect measurements
  6. Electron cyclotron resonance etching of III–V nitrides in IBr/Ar plasmas
  7. Transient four wave mixing experiments on GaN
  8. Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence
  9. The role of piezoelectric fields in GaN-based quantum wells
  10. Visible-Blind UV Digital Camera Based On a 32 x 32 Array of GaN/AlGaN p-i-n Photodiodes
  11. UV-Specific (320-365 nm) Digital Camera Based On a 128x128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes

Contributed by Andrej E. Nikolaev from shuttle.ioffe.rssi.ru. on Wednesday, July 3, 1996 11:12:40 AM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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