Data for reference smith-apl-67-1830

Characterization of structural defects in wurtzite GaN grown on 6H SiC using plasma-enhanced molecular beam epitaxy

David J. Smith, D. Chandrasekhar , B. Sverdlov, A. Botchkarev, A. Salvador, H. Morkoc

Applied Physics Letters 67(13), 1830 (1995).

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This item is cited by the following items in the database:

  1. Initial Growth Prismatic Domains in Cyclotron Assisted MBE of GaN/SiC

Contributed by Philippe Vermaut from 192.93.101.126 on Tuesday, June 11, 1996 5:31:27 AM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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