Data for reference lee-apl-67-1754

Reactive ion etching of GaN using CHF3/Ar and C2ClF5/Ar plasmas

Heon Lee, David B. Oberman, James S. Harris, Jr.

Applied Physics Letters 67(12), 1754 (1995).

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This item is cited by the following items in the database:

  1. Electron cyclotron resonance etching of III–V nitrides in IBr/Ar plasmas

Contributed by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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