Data for reference chen-apl-67-1653

Neutral-donor-bound exciton recombination dynamics in GaN grown by metalorganic chemical vapor deposition

G. D. Chen, M. Smith, J. Y. Lin, H. X. Jiang , M. Asif Khan, C. J. Sun

Applied Physics Letters 67(12), 1653 (1995).

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This item is cited by the following items in the database:

  1. Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.
  2. Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

Contributed by Andrej E. Nikolaev from shuttle.ioffe.rssi.ru. on Wednesday, July 3, 1996 10:21:39 AM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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