Data for reference pearton-apl-67-1435

Ion implantation doping and isolation of GaN

S. J. Pearton, C. B. Vartuli , J. C. Zolper , C. Yuan, R. A. Stall

Applied Physics Letters 67(10), 1435 (1995).

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This item is cited by the following items in the database:

  1. High Resistivity AlxGa1-xN Layers Grown by MOCVD
  2. Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N2 overpressure
  3. High temperature surface degradation of III–V nitrides
  4. Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N2 overpressure

Contributed by John C. Zolper from tieinslp37.sandia.gov. on Monday, January 29, 1996 2:35:55 PM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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