Data for reference fischer-apl-67-1298

On p-type doping in GaN - acceptor binding energies

S Fischer, C Wetzel, EE Haller, BK Meyer

Applied Physics Letters 67(9), 1298 (1995).

Photoluminescence on undoped n-type GaN layers grown on 6H-SiC and sapphire reveal residual acceptors with a binding energy of 230 meV. ongly correlated with the graphite susceptor containing the Ga. It is concluded that carbon on nitrogen sites introduces the most shallow acceptor in GaN. The experimental observations supported by an estimate of the acceptor binding energy using effective-mass-theory.

This item is cited by the following items in the database:

  1. Nonuniform Morphology and Luminescence Properties of a Molecular Beam Epitaxy GaN Film from Atomic Force Microscopy, Scanning Electron Microscopy and Cathodoluminescence
  2. Photoluminescence of Strain-Engineered MBE-Grown GaN and InGaN Quantum-Well Structures

Contributed by Christian Wetzel from b2-msd2.lbl.gov. on Monday, October 14, 1996 4:43:10 PM

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