Data for reference ping-apl-67-1250

Study of chemically assisted ion beam etching of GaN using HCl gas

A. T. Ping, I. Adesida , M. Asif Khan

Applied Physics Letters 67(9), 1250 (1995).

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This item is cited by the following items in the database:

  1. Fabrication of GaN mesa structures

Contributed by Andrej E. Nikolaev from shuttle.ioffe.rssi.ru. on Wednesday, July 3, 1996 10:41:49 AM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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