Data for reference dmitriev-apl-67-115

AlGaN pn junctions

V. A. Dmitriev, K. Irvine, C. H. Carter, Jr., A. S. Zubrilov, D. V. Tsvetkov

Applied Physics Letters 67(1), 115 (1995).

AlGaN pn homo- and heterojunctions were fabricated on SiC substrates by MOCVD. Electroluminescence from AlGaN pn junctions was studied.

This item is cited by the following items in the database:

  1. GaN Based p‐n Structures Grown on SiC Substrates
  2. Fabrication of GaN mesa structures

Contributed by Andrej E. Nikolaev from shuttle.ioffe.rssi.ru. on Wednesday, July 3, 1996 6:21:30 AM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Thursday, April 28, 2005 10:17:36 AM.
© 1998 The Materials Research Society