Pressure-dependent photoluminescence study of wurtzite GaN

Applied Physics Letters 66(25), 3492 (1995).

Low-temperature photoluminescence (PL) in single- crystal GaN films grown on sapphire substrates by metalorganic chemical vapor deposition has been studied as a function of applied hydrostatic pressure using the diamond-anvil-cell technique. The PL spectra of the GaN at atmospheric pressure were dominated by two sharp, strong, near- band-edge exciton luminescence lines and a broad emission band in the yellow spectral region. The exciton emission lines were found to shift almost linearly toward higher energy with increasing pressure. While the yellow emission band showed a similar blue shift behavior under applied pressure, a relatively strong sublinear pressure dependence was observed. By examining the pressure dependence of the exciton emission structures, the pressure coefficient of the direct Gamma band gap in the wurtzite GaN was determined. The value of the hydrostatic deformation potential of the band gap has also been deduced from the experimental results. © 1995 American Institute of Physics.

This item is cited by the following items in the database:

1. ScAlMgO₄: an Oxide Substrate for GaN Epitaxy
   
2. Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
3. Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells

Contributed by E. Hellman
Modified by Eric S. Hellman from nsr.mij.mrs.org. on Monday, November 20, 1995 3:46:31 PM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

last updated Monday, May 2, 2005 5:31:02 PM.
© 1998 The Materials Research Society