Data for reference kung-apl-66-2958

High quality AlN and GaN epilayers grown on (00.1) sapphire, (100), and (111) silicon substrates

P Kung, A Saxler, X Zhang, D Walker, TC Wang, I Ferguson, M Razeghi

Applied Physics Letters 66(22), 2958 (1995).

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This item is cited by the following items in the database:

  1. Crystalline Structure changes in GaN Films Grown at Different Temperatures
  2. Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer

Contributed by Andrei Nikolaev from shuttle.ioffe.rssi.ru
Modified by H. Marchand from montreal.ucsb.edu. on Wednesday, February 10, 1999 8:43:19 PM

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