Data for reference shul-apl-66-1761

High temperature electron cyclotron resonance etching of GaN, InN, and AlN

R. J. Shul, S. P. Kilcoyne, M. Hagerott Crawford, J. E. Parmeter , C. B. Vartuli, C. R. Abernathy, S. J. Pearton

Applied Physics Letters 66(14), 1761 (1995).

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This item is cited by the following items in the database:

  1. ECR RIE-Enhanced Low Pressure Plasma Etching of GaN/InGaN/AlGaN Heterostructures
  2. Etching processes for fabrication of GaN/InGaN/AlN microdisk laser structures
  3. Thermal stability of W, WSix , and Ti/Al ohmic contacts to InGaN, InN, and InAlN
  4. Electron cyclotron resonance etching of III–V nitrides in IBr/Ar plasmas

Contributed by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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