Data for reference cheng-apl-66-1509

Selective growth of zinc-blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy

T. S. Cheng, L. C. Jenkins, S. E. Hooper, C. T. Foxon , J. W. Orton, D. E. Lacklison

Applied Physics Letters 66(12), 1509 (1995).

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This item is cited by the following items in the database:

  1. The Morphology and Cathodoluminescence of GaN Thin Films
  2. Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces by a modified MBE method

Contributed by E. Hellman
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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