Data for reference ren-apl-66-1503

Use of InN for Ohmic contacts on GaAs/AlGaAs heterojunction bipolar transistors

F. Ren , C. R. Abernathy , S. N. G. Chu, J. R. Lothian , S. J. Pearton

Applied Physics Letters 66(12), 1503 (1995).

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This item is cited by the following items in the database:

  1. Thermal stability of W, WSix , and Ti/Al ohmic contacts to InGaN, InN, and InAlN
  2. High temperature surface degradation of III–V nitrides

Contributed by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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