Data for reference qian-apl-66-1252

Microstructural characterization of alpha -GaN films grown on sapphire by organometallic vapor phase epitaxy

W. Qian, M. Skowronski, M. De Graef , K. Doverspike, L. B. Rowland, D. K. Gaskill

Applied Physics Letters 66(10), 1252 (1995).

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This item is cited by the following items in the database:

  1. Growth, Doping and Characterization of AlxGa1-xN Thin Film Alloys on 6H-SiC(0001) Substrates
  2. The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
  3. Defect structure in selectively grown GaN films with low threading dislocation density

Contributed by E. Hellman
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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