High dislocation densities in high efficiency GaN-based light-emitting diodes

Applied Physics Letters 66(10), 1249 (1995).

The electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied. LEDs with external quantum efficiencies as high as 4% were characterized by transmission electron microscopy and found to contain dislocation densities in excess of 2 (times) 10¹⁰ cm^-2. A comparison to other III-V arsenide and phosphide LEDs shows that minority carries in GaN-based LEDs are remarkably insensitive to the presence of structural defects. Dislocations do not act as efficient nonradiative recombination sites in nitride materials. It is hypothesized that the benign character of dislocations arises from the ionic nature of bonding in the III-V nitrides. © 1995 American Institute of Physics.

This item is cited by the following items in the database:

1. ScAlMgO₄: an Oxide Substrate for GaN Epitaxy
   
2. Growth and characterization of AlInGaN quaternary alloys
3. The Morphology and Cathodoluminescence of GaN Thin Films
4. Nonuniform Morphology and Luminescence Properties of a Molecular Beam Epitaxy GaN Film from Atomic Force Microscopy, Scanning Electron Microscopy and Cathodoluminescence
5. Halide vapor phase epitaxy of gallium nitride films on sapphire and silicon substrates.
6. A Perspective on the GaN Injection Laser
7. Defect structure in selectively grown GaN films with low threading dislocation density
8. Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy
9. Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions

Contributed by Eric S. Hellman from nsr.mij.mrs.org.
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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