khan-apl-66-1083

Data for reference khan-apl-66-1083

Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300C

M. A. Khan, M. S. Shur, J. N. Kuznia, Q. Chen, J. Burm, W. Schaff

Applied Physics Letters 66(9), 1083 (1995).

The dc characteristics and microwave performance of AlGaN/GaN heterostructure field effect transistors in the temperature range from 25 to 300 ∑C.

This item is cited by the following items in the database:

High-temperature structural behavior of Ni/Au Contact on GaN(0001)

Contributed by Andrej E. Nikolaev from shuttle.ioffe.rssi.ru. on Wednesday, July 3, 1996 11:01:55 AM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru
Modified by Chong Cook Kim from apnc111.216.216.211.in-addr.arpa. on Thursday, January 18, 2001 9:02:58 AM

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